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1.
The aim of this work is to develop a reliable and fast algorithm to compute bifurcation points and bifurcated branches. It is based upon the asymptotic numerical method (ANM) and Padé approximants. The bifurcation point is detected by analysing the poles of Padé approximants or by evaluating, along the computed solution branch, a bifurcation indicator well adapted to ANM. Several examples are presented to assess the effectiveness of the proposed method, that emanate from buckling problems of thin elastic shells. Especially problems involving large rotations are discussed. Copyright © 2004 John Wiley & Sons, Ltd.  相似文献   
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Transport properties of ungated Si/Si1-xGex are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000 cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transconductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%  相似文献   
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PURPOSE: To determine the maximum-tolerated dose (MTD) and the dose-limiting toxicities (DLTs) of a weekly schedule of titanocene dichloride (TD) and to define the pharmacokinetics of titanium in plasma and urine. PATIENTS AND METHODS: Twenty patients with a median age of 58 years received 83 courses of TD. TD was given as 1-hour infusion at escalating doses from 70 to 185 mg/m2/wk. Pharmacokinetic analysis was performed in eight patients for total plasma titanium (TPTi) and in three patients for ultrafiltrable titanium (UFTi). RESULTS: At the fifth dose level (185 mg/m2/wk), a variety of DLTs were seen in five patients: fatigue in three, bilirubinemia in one, and hypokalemia in two. A further six patients were treated at 140 mg/m2; only one had dose-limiting creatinine elevation and this dose was therefore defined as the MTD. No myelosuppression or alopecia were observed. One patient with adenocarcinoma of unknown primary had a minor response. Pharmacokinetic analysis showed that TPTi maximum concentration (Cmax) values were linear with dose and elimination of TPTi was triphasic with a long terminal half-life (t1/2; median, 165 hours; range, 89 to 592). Between 7% and 24.3% of the total of administered titanium was eliminated in urine over the first 24 hours. In contrast, UFTi elimination was described by a one-compartment model with a t1/2 of 0.41 hours; peak levels of UFTi were 5.2% +/- 2.5% those of TPTi. CONCLUSION: The MTD of TD given on a weekly schedule is 140 mg/m2, with cumulative, but reversible creatinine and bilirubin elevation being the DLTs.  相似文献   
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Linear 1,2-polybutadiene, glass transition temperature (Tg) ?18°C, is crosslinked at ?10°C, to ?20°C by γ irradiation while strained in simple extension, with extension, ratios (λ0) from 1.2 to 2.7. After release, the sample retracts to a state of ease (λs) at room temperature. From equilibrium stress–strain measurements up to a stretch ratio relative to the state of ease (Λ) of 1.2, together with λ0 and λs, the concentration of network strands terminated by trapped entanglements (νN) is calculated. For this purpose, a three-constant Mooney–Rivlin formulation is used, in which the entanglement network is described by Mooney–Rivlin coefficients C1N and C2N, whereas the crosslink networks is described by the coefficient C1x only. The ratio ψN = C2N/(C1N + C2N) is estimated from parallel studies of nonlinear stress relaxation of the uncrosslinked polymer, taking into account the thermal history before and during irradiation. For substantial degrees of crosslinking, i.e., for R0′ = νxN > 0.4 (where νN is the concentration of network strands terminated by crosslinks), and for λ0 < 1.8, C2N agrees rather well with the value obtained from stress relaxation of the uncrosslinked polymer in the range of time scale where it is nearly independent of time (1.87 X 105 pascals). The corresponding value of νN is 2.3 × 10?4 moles/cm3, in good agreement with that obtained from viscoelastic measurements of the uncrosslinked polymer in the plateau zone (2.5 × 10?4). However, for R0′ ? 0.2, smaller values of C2N and νN are obtained, indicating that for low degrees of crosslinking the entanglements are not completely trapped. Also, for higher values of λ0, C2N and νN turn out to be somewhat smaller. Similar, less extensive results were obtained previously on a 1,2-polybutadiene with somewhat higher vinyl content and a higher Tg. Crosslinked samples of both these polymers were subjected to equilibrium stress–strain measurements in simple elongation from the state of ease at higher strains up to Λ = 1.7. The results agreed closely with calculations from the three-constant Mooney–Rivlin theory.  相似文献   
7.
The fracture behaviour of Mg65Cu25Y10 bulk metallic glass (BMG) during room-temperature three-point bending was investigated. The BMG was initially produced by casting into a wedge-shaped mold which generated an amorphous structure below the ∼4 mm thickness zone of the wedge. Three-point bend testing was then carried out on the BMG with the fracture angles and salient features of the fracture surfaces examined by scanning electron microscopy. Observations indicate that this type of deformation mode results in fracture via crack propagation from both surfaces of the samples where the tensile and compressive stresses are greatest. The direction of crack propagation was also found to deviate considerably from 45° to the length direction of sample. A scanning electron microscopy (SEM) study of the fracture surfaces indicated that deformation banding was a feature of crack propagation within compressive zone whereas the tensile zone generated a featureless surface characteristic of brittle failure. The mechanism of failure of the present alloy is discussed on the basis of the observed features on the fracture surfaces and the direction of propagation of cracks during failure and compared with the failure mechanism of samples fractured under both simple tension and compression.  相似文献   
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As the semiconductor industry pushes towards ever decreasing device sizes, the need for an efficient yet accurate simulation method increases. We present a different approach to modeling ultra small semiconductor devices through the use of recursive scattering matrices. This approach is a completely quantum mechanical approach in three dimensions, yet does not suffer from excessive computation time or resources. While the transport in most small semiconductor devices is typically 2D in nature, with a 3D model we are capable of incorporating the interaction of the 3D modes in the contacts with the 2D modes in the active regions. We demonstrate this approach by presenting results for a short channel fully-depleted SOI (Silicon On Insulator) MOSFET. We present results using both hardwall potentials and self-consistent potentials as calculated through the use of an iterative Poisson solver.  相似文献   
9.
The structural integrity and damage tolerance of typical composite T-joints found in ships constructed from glass fibre reinforced plastic was the subject of this investigation. The effect of the geometry of the T-joint on the strain distribution was investigated using finite element (FE) analysis. The results, reported in this paper, showed that the critical strains were significantly affected by the joint geometry. Results of the FE analysis conducted to investigate the effect of disbonds between the filler and overlaminate are also reported. This showed that particular defects led to large changes in the strains in the T-joint structure, which would encourage disbond progression. The FE model was validated by mechanical tests on a representative T-joint, instrumented with surface strain gauges and displacement transducers, into which a range of defects was progressively introduced.  相似文献   
10.
N. Afrin  M.Z. Quadir  W. Xu  M. Ferry 《Acta Materialia》2012,60(18):6288-6300
The crystallographic nature of microband boundaries was investigated in a Goss oriented nickel single crystal following cold deformation in channel die plane strain compression. Standard electron backscatter diffraction (EBSD), three-dimensional (3-D)-EBSD and transmission electron microscopy (TEM) were used in the investigation. When viewed in the three orthogonal sections microband boundary traces were classically aligned in the transverse direction section at an acute angle from the rolling direction (RD), but appeared wavy in the normal direction (ND) section. The latter observation may lead to the conclusion that microband boundaries are non-crystallographic. 3-D EBSD was used to reconstruct actual microbands in a deformed volume that revealed significant new information about their structure. Here microband surfaces are largely planar over large distances, but frequently interrupted by local distortions and undulations due to interactions between intersecting non-coplanar microbands. The combined EBSD/TEM investigation has revealed that microband boundaries are aligned close to an active {1 1 1} slip plane (i.e. they are crystallographic), but the undulations and distortions they contain are non-crystallographic in the sense that they deviate from an active slip plane. The non-crystallographic features of microbands (as revealed by their wavy structure in the ND section) may be explained by the crystallographic oscillations of up to ±7.5° towards RD that occur during plastic deformation. Such oscillations result in varying fractions of slip on a given {1 1 1} plane, resulting in varying degrees of interaction between the two sets of non-coplanar microbands. These local and intense microband interactions result in their deviation from their active slip planes.  相似文献   
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